III-V SUBSTRATES



  • Gallium Arsenide (GaAs)
  • Gallium Phosphide (GaP)
  • Gallium Antimonide (GaSb)
  • Indium Phosphide (InP)
  • Indium Antimonide (InSb)
  • Indium Arsenide (InAs)


III-V SUBSTRATES



  • GaAs based PHEMT (InGaP- or AlAs- Etch Stop, E- Mode)
  • MHEMT InP based HBT (DHBT, SHBT, C- or Be- Base doped)
  • MHEMT RTT, RTD


II-VI SUBSTRATES



  • Silicon Carbide (SiC)
  • Gallium Nitride (GaN)
  • Aluminium Nitride (AlN)


SIC WAFERS





gAAS WAFERS



SIC Wafers



GAN WAFERS



our services



Advanced Materials



  • Semiconductor CZ/FZ Si wafer: 4" to 12"
  • Solar wafer
  • Silicon on insulator (SOI) wafer
  • SiO2/LPCVD wafer
  • Glass wafer :Borofloat 33, quartz, soda lime, etc
  • Sputtering targets and evaporation material
  • Chromed photomask blanks: soda lime and quartz
  • Packing boxes for crystal, wafers, filter, chip, etc


Advanced Materials



  • AIIIBV compounds (GaAs, GaP, InP, InAs, etc)
  • Sapphire wafer/ SOS wafer/ AIN-ON-Sapphire wafers
  • Ge wafer/ Ge-on-Silicon / Si-Ge wafers
  • SiC wafer / HPSI SiC Wafer/ SiC epi wafers
  • HEMT GaN wafer/ GaN-on-Sapphire /GaN-on-SiC, GaN-on-Silicon
  • SriTO3 substrate ​/ BaTiO3
  • LiNbO3 / LiTaO3 substrate.
  • MgO, MgF2, BaF2, CaF2 etc.


Professional Services



  • Fabrication of soda lime/quartz photolithographic masks
  • Silicon microfabrication (wet etching, dry etching and wafer bonding)
  • Consultancy of fabrication process Characterization of microdevices/microsystems
  • Consultancy of microfluidics and biological microdevices laser cutting on glass or MEMS and RFID substrates​


CONTACT US:



Headquarter in Singapore:

​BONDA TECHNOLOGY PTE LTD

Address: 10 Anson Road, #10-11 International Plaza S(079903)

Tel: 65-65158750 Fax: 65-67741768

email: sales@bondatek.com

WhatApp: +6597860925

WeChat: BONDATEK





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